IS29GL128 NOR Flash Memory Devices

ISSI IS29GL128 NOR Flash Memory Devices offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. These memory devices feature a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation. The IS29GL128 memory devices thus offer faster effective programming time than standard programming algorithms. These memory devices are ideal for embedded applications that require higher density, better performance, and low power consumption. 

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Series Memory Size Supply Voltage - Min Supply Voltage - Max Active Read Current - Max Interface Type Organisation Data Bus Width Timing Type Minimum Operating Temperature Maximum Operating Temperature Packaging
ISSI NOR Flash 128Mb, 64 Ball BGA(9X9mm), 3V, RoHS, Highest Sector Protected 372In Stock
Min.: 1
Mult.: 1
Max.: 110

SMD/SMT BGA-64 IS29GL128 128 Mbit 2.7 V 3.6 V 45 mA Parallel 16 M x 8/8 M x 16 8 bit/16 bit Asynchronous - 40 C + 105 C
ISSI NOR Flash 128Mb, 64 Ball BGA(9X9mm), 3V, RoHS, Lowest Sector Protected 141In Stock
260Expected 01/04/2026
Min.: 1
Mult.: 1
Max.: 2

SMD/SMT BGA-64 IS29GL128 128 Mbit 2.7 V 3.6 V 45 mA Parallel 16 M x 8/8 M x 16 8 bit/16 bit Asynchronous - 40 C + 105 C
ISSI NOR Flash 128Mb, 64 Ball BGA(9X9mm), 3V, RoHS, T&R, Lowest Sector Protected Non-Stocked Lead-Time 14 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

SMD/SMT BGA-64 IS29GL128 128 Mbit 3 V 3.6 V 45 mA Parallel 16 M x 8/8 M x 16 8 bit/16 bit Asynchronous - 40 C + 105 C Reel
ISSI NOR Flash 128Mb, 64 Ball BGA(9X9mm), 3V, RoHS, T&R, Highest Sector Protected Non-Stocked Lead-Time 14 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

SMD/SMT BGA-64 IS29GL128 128 Mbit 3 V 3.6 V 45 mA Parallel 16 M x 8/8 M x 16 8 bit/16 bit Asynchronous - 40 C + 105 C Reel