Types of Discrete Semiconductors
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Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes
04-02-2026
04-02-2026
High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes
04-02-2026
04-02-2026
AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.
Taiwan Semiconductor TESDA1L2B17P1Q1 ESD Protection Diode
02-19-2026
02-19-2026
Safeguards power interfaces, control lines, or low‑speed data lines within electronic systems.
Taiwan Semiconductor Schottky Barrier Rectifiers
08-11-2025
08-11-2025
These devices have a low power loss and are highly efficient.
Taiwan Semiconductor PLDS20J & PLDS20JH Rectifiers
08-05-2025
08-05-2025
20A, 600V rectifiers with low VF drop and high surge current capability, in a D2PAK-D package.
Taiwan Semiconductor PLAD10J & PLAD10JH Rectifiers
08-05-2025
08-05-2025
10A, 600V standard rectifiers with low power loss and high efficiency, in a ThinDPAK package.
Taiwan Semiconductor PLDS30J & PLDS30JH Rectifiers
08-05-2025
08-05-2025
30A, 600V rectifiers with low VF drop and high surge current capability, in a D2PAK-D package.
Taiwan Semiconductor TESDA6V0U40P1Q0 ESD Protection Diode
07-22-2025
07-22-2025
AEC-Q101 qualified, unidirectional ESD protection diode to protect sensitive electronic components.
Taiwan Semiconductor BC807-25H & BC807-40H PNP Transistors
07-10-2025
07-10-2025
300mW, AEC-Q101 qualified small signal transistors, ideal for general switching and amplification.
Taiwan Semiconductor BC85xBWH & BC857WH PNP Transistors
07-10-2025
07-10-2025
200mW, AEC-Q101 qualified small signal transistors, ideal for general switching and amplification.
Taiwan Semiconductor HS1Y 1A/1600V High Efficiency SMD Rectifiers
07-10-2025
07-10-2025
High-efficiency rectifiers designed for general-purpose and power supply applications.
Taiwan Semiconductor BC846BH & BC847B/CH NPN Transistors
07-10-2025
07-10-2025
200mW, AEC-Q101 qualified small signal transistors, ideal for general switching and amplification.
Taiwan Semiconductor BC846BWH & BC847B/CWH NPN Transistors
07-10-2025
07-10-2025
200mW, AEC-Q101 qualified small signal transistors, ideal for general switching and amplification.
Taiwan Semiconductor BZX58 Surface Mount Zener Diodes
06-03-2025
06-03-2025
AEC-Q101 qualified diodes that are ideally suited for automated assembly processes.
Taiwan Semiconductor MMSZ52 Surface Mount Zener Diodes
06-03-2025
06-03-2025
AEC-Q101 qualified diodes that are ideally suited for automated assembly processes.
Taiwan Semiconductor BZT52 Surface Mount Zener Diodes
06-03-2025
06-03-2025
AEC-Q101 qualified diodes that are ideally suited for automated assembly processes.
Taiwan Semiconductor BZX84 Surface Mount Zener Diodes
06-03-2025
06-03-2025
AEC-Q101 qualified diodes that are ideally suited for automated assembly processes.
Taiwan Semiconductor BAT Schottky Barrier Diodes
03-20-2025
03-20-2025
Offer low forward voltage and are ideal for reverse polarity protection applications.
Taiwan Semiconductor SD103 Schottky Barrier Diodes
03-20-2025
03-20-2025
Feature low forward voltage, 150mA forward current, and low power loss.
Taiwan Semiconductor BAW Switching Diodes
03-20-2025
03-20-2025
Ideal for Switching Mode Power Supplies (SMPS) and high-speed switching applications.
Taiwan Semiconductor BAS Switching Diodes
03-20-2025
03-20-2025
Ideal for Switching Mode Power Supplies (SMPS), adapters, and high-speed switching applications.
Taiwan Semiconductor BAV Switching Diodes
03-20-2025
03-20-2025
Feature fast switching speed, low leakage current, and low power loss.
Taiwan Semiconductor 1N4148 Switching Diodes
03-20-2025
03-20-2025
Feature fast switching speed, high surge current capability, and high efficiency.
Taiwan Semiconductor TLDxxAH Transient Voltage Suppressor (TVS) Diodes
03-17-2025
03-17-2025
26V to 82V, AEC-Q101 qualified, unidirectional surface-mount TVS diodes.
Taiwan Semiconductor PSAD Super Fast Surface Mount Rectifiers
01-30-2025
01-30-2025
Feature low power loss and high efficiency and are designed for automated placement.
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RECOM Power ICs, Transformers, & Discrete Solutions
04-24-2026
04-24-2026
Features components ideal for energy, industrial, and medical applications.
Littelfuse SJx08x High-Temperature SCRs
04-24-2026
04-24-2026
Voltage of up to 800V, surge current capability of up to 100A, & a temperature rating of +150°C.
Littelfuse QVx35xHx High-Temperature Alternistor TRIACs
04-24-2026
04-24-2026
Offers a 35A rated current and is available in TO-220AB, TO-220 isolated, and TO-263 packages.
Diotec Semiconductor BAS70-05W Schottky Diode
04-16-2026
04-16-2026
Designed for high‑speed switching and voltage clamping in space‑constrained applications.
onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04-14-2026
04-14-2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
ROHM Semiconductor High-Density SiC Power Modules
04-10-2026
04-10-2026
TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.
Vishay RS07x Fast Recovery Rectifiers
04-07-2026
04-07-2026
Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 800V.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04-07-2026
04-07-2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
Vishay S07x-M Standard Recovery High Voltage Rectifiers
04-07-2026
04-07-2026
Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 1000V.
onsemi NTMFD0D9N02P1E MOSFET
04-06-2026
04-06-2026
Dual N-channel MOSFET designed with low Rg for fast switching applications.
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes
04-02-2026
04-02-2026
AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.
Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes
04-02-2026
04-02-2026
High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.
Vishay VS-HOT200C080 200A 80V Power MOSFET Module
04-02-2026
04-02-2026
This device reduces board space requirements by up to 15% compared to standard discrete solutions.
STMicroelectronics STL059N4S8AG Power MOSFET
03-31-2026
03-31-2026
A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.
Toshiba N-Channel/P-Channel Power MOSFETs
03-31-2026
03-31-2026
Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.
Infineon Technologies OptiMOS™ 6 60V Power MOSFETs
03-27-2026
03-27-2026
Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.
Infineon Technologies Multi-Purpose Diodes for ESD Protection
03-27-2026
03-27-2026
Offering the best protection in a small footprint, the diodes deliver superior ESD performance.
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs
03-27-2026
03-27-2026
Application-optimized performance, enabling peak performance for data centers, servers, & AI.
RECOM Power RVS002 Micropower Isolated Power Bridge Rectifiers
03-24-2026
03-24-2026
Compact and ideal for micro-power isolated power supply applications with limited space.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03-24-2026
03-24-2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
03-20-2026
03-20-2026
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
Vishay XFD11K XClampR® Transient Voltage Suppressors
03-18-2026
03-18-2026
Surface-mount bidirectional devices designed for high-temperature stability and high reliability.
Vishay T3KN12CA thru T3KN100CA PAR® TVS
03-18-2026
03-18-2026
TVSs are bidirectional, 3000W peak-pulse-power devices ideal for automated placement.
Infineon Technologies OptiMOS™ 8 Power MOSFETs
03-17-2026
03-17-2026
These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
03-17-2026
03-17-2026
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
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