Types of Discrete Semiconductors
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ROHM Semiconductor High-Density SiC Power Modules
04-10-2026
04-10-2026
TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
03-17-2026
03-17-2026
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
ROHM Semiconductor 750V N-Channel SiC MOSFETs
10-17-2025
10-17-2025
Devices boost switching frequency, decreasing the capacitors, reactors & other components required.
ROHM Semiconductor RD3x Automotive N-Channel Power MOSFETs
10-16-2025
10-16-2025
AEC-Q101 MOSFETs featuring low forward voltage, fast recovery time, and high surge capability.
ROHM Semiconductor RF202LB2S Super Fast Recovery Diode
08-21-2025
08-21-2025
A silicon epitaxial planar type super-fast recovery diode featuring low VF and low switching loss.
ROHM Semiconductor RQxAT P-Channel MOSFETs
08-21-2025
08-21-2025
Feature surface mount packaging with low ON resistance and are 100% Rg and UIS tested.
ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFET
08-21-2025
08-21-2025
A 1700V drain-source voltage (VDSS) and 3.9A continuous drain current (ID) rated SiC MOSFET.
ROHM Semiconductor RJ1x10BBG Power MOSFETs
08-21-2025
08-21-2025
N-channel power MOSFETs featuring low on-resistance and a high power package.
ROHM Semiconductor RNxMFH Automotive Grade PIN Diodes
08-21-2025
08-21-2025
Automotive-grade diodes with an ultra-small mold package suitable for high-frequency switching.
ROHM Semiconductor RN242SM PIN Diode
08-20-2025
08-20-2025
Features low capacitance and and ultra-small mold package suitable for high-frequency switching.
ROHM Semiconductor RH7L04 60V N-Channel Power MOSFETs
08-19-2025
08-19-2025
AEC-Q101 qualified, 60V VDSS and ±40A ID rated automotive grade MOSFETs.
ROHM Semiconductor JMZV8.2B 5mA Zener Diodes
08-19-2025
08-19-2025
Devices come in a small power mold package suitable for voltage regulation applications.
ROHM Semiconductor RH7E04BBJFRA -30V P-Channel Power MOSFET
08-19-2025
08-19-2025
A -30V VDSS and ±40A ID rated automotive grade MOSFET that is AEC-Q101 qualified.
ROHM Semiconductor RQ3G120BKFRA 40V N-Channel Power MOSFET
08-19-2025
08-19-2025
A 40V VDSS and ±12A ID rated automotive grade MOSFET that is AEC-Q101 qualified.
ROHM Semiconductor RH7G04 40V N-Channel Power MOSFETs
08-19-2025
08-19-2025
These devices are AEC-Q101 qualified, 40V VDSS, and ±40A ID-rated automotive-grade MOSFETs.
ROHM Semiconductor RH7L03 60V N-Channel Power MOSFET
08-19-2025
08-19-2025
A 60V VDSS and ±35A ID rated automotive grade MOSFET that is AEC-Q101 qualified.
ROHM Semiconductor RH7P04BBKFRA 100V N-Channel Power MOSFET
08-19-2025
08-19-2025
A 100V VDSS and ±40A ID rated automotive grade MOSFET that is AEC-Q101 qualified.
ROHM Semiconductor RH7L04CBJFRA -60V P-Channel Power MOSFET
08-19-2025
08-19-2025
A -60V VDSS and ±36A ID rated automotive grade MOSFET that is AEC-Q101 qualified.
ROHM Semiconductor RQ5G040AT -40V P-Channel Small Signal MOSFET
08-19-2025
08-19-2025
A -40V drain-source voltage (VDSS) and ±4.0A continuous drain current (ID) rated MOSFET.
ROHM Semiconductor AG508EGD3 -40V -40A P-Channel Power MOSFET
08-06-2025
08-06-2025
This MOSFET is an automotive-grade power MOSFET that is AEC-Q101 qualified.
ROHM Semiconductor 2SCR579D3 NPN 1.5A 160V Power Transistor
08-06-2025
08-06-2025
A power transistor with low VCE(sat) and is suitable as a low-frequency amplifier.
ROHM Semiconductor 2SAR579D3 PNP 1.5A 160V Power Transistor
08-06-2025
08-06-2025
A power transistor with low VCE(sat) and is suitable as a low-frequency amplifier.
ROHM Semiconductor RBR40NS Schottky Barrier Diodes
08-04-2025
08-04-2025
Designed for use in switching power supplies and features 100A peak forward surge current.
ROHM Semiconductor RQ3P270BLFRA Power MOSFET
08-04-2025
08-04-2025
Automotive-grade MOSFET that is AEC-Q101 qualified in an HSMT8AG package.
ROHM Semiconductor PBZLx Zener Diodes
08-04-2025
08-04-2025
Designed for voltage regulation applications and features a maximum power dissipation of 1000mW.
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RECOM Power ICs, Transformers, & Discrete Solutions
04-24-2026
04-24-2026
Features components ideal for energy, industrial, and medical applications.
Littelfuse SJx08x High-Temperature SCRs
04-24-2026
04-24-2026
Voltage of up to 800V, surge current capability of up to 100A, & a temperature rating of +150°C.
Littelfuse QVx35xHx High-Temperature Alternistor TRIACs
04-24-2026
04-24-2026
Offers a 35A rated current and is available in TO-220AB, TO-220 isolated, and TO-263 packages.
Diotec Semiconductor BAS70-05W Schottky Diode
04-16-2026
04-16-2026
Designed for high‑speed switching and voltage clamping in space‑constrained applications.
onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04-14-2026
04-14-2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
ROHM Semiconductor High-Density SiC Power Modules
04-10-2026
04-10-2026
TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.
Vishay RS07x Fast Recovery Rectifiers
04-07-2026
04-07-2026
Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 800V.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04-07-2026
04-07-2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
Vishay S07x-M Standard Recovery High Voltage Rectifiers
04-07-2026
04-07-2026
Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 1000V.
onsemi NTMFD0D9N02P1E MOSFET
04-06-2026
04-06-2026
Dual N-channel MOSFET designed with low Rg for fast switching applications.
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes
04-02-2026
04-02-2026
AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.
Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes
04-02-2026
04-02-2026
High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.
Vishay VS-HOT200C080 200A 80V Power MOSFET Module
04-02-2026
04-02-2026
This device reduces board space requirements by up to 15% compared to standard discrete solutions.
STMicroelectronics STL059N4S8AG Power MOSFET
03-31-2026
03-31-2026
A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.
Toshiba N-Channel/P-Channel Power MOSFETs
03-31-2026
03-31-2026
Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.
Infineon Technologies OptiMOS™ 6 60V Power MOSFETs
03-27-2026
03-27-2026
Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.
Infineon Technologies Multi-Purpose Diodes for ESD Protection
03-27-2026
03-27-2026
Offering the best protection in a small footprint, the diodes deliver superior ESD performance.
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs
03-27-2026
03-27-2026
Application-optimized performance, enabling peak performance for data centers, servers, & AI.
RECOM Power RVS002 Micropower Isolated Power Bridge Rectifiers
03-24-2026
03-24-2026
Compact and ideal for micro-power isolated power supply applications with limited space.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03-24-2026
03-24-2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
03-20-2026
03-20-2026
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
Vishay XFD11K XClampR® Transient Voltage Suppressors
03-18-2026
03-18-2026
Surface-mount bidirectional devices designed for high-temperature stability and high reliability.
Vishay T3KN12CA thru T3KN100CA PAR® TVS
03-18-2026
03-18-2026
TVSs are bidirectional, 3000W peak-pulse-power devices ideal for automated placement.
Infineon Technologies OptiMOS™ 8 Power MOSFETs
03-17-2026
03-17-2026
These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
03-17-2026
03-17-2026
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
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