TGA2830 & TGA2975 GaN Power Amplifiers

Qorvo TGA2830 & TGA2975 GaN Power Amplifiers operate from 2.7GHz to 3.5GHz and are designed using Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). The TGA2830 and TGA2975 can operate under both pulse and CW conditions and are ideally suited for commercial and defense related radar applications. Both RF ports on these devices have integrated DC blocking capacitors and are matched to 50Ω. 

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Operating Frequency Gain Mounting Style Package/Case Technology Minimum Operating Temperature Maximum Operating Temperature Series Packaging
Qorvo RF Amplifier 2.7-3.5 GHz, 18 W GaN PA Non-Stocked Lead-Time 20 Weeks
Min.: 500
Mult.: 500
: 500
2.7 GHz to 3.5 GHz 30.5 dB SMD/SMT QFN-24 GaN SiC - 40 C + 85 C TGA2830 Reel
Qorvo TGA2975-SMTR7
Qorvo RF Amplifier 2.7-3.5 GHz, 12 W GaN PA Non-Stocked Lead-Time 20 Weeks
Min.: 250
Mult.: 250
: 250

TGA2975 Reel