PSRAM (Pseudo SRAM) Semiconductors

Types of Semiconductors

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Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
AP Memory APS512XXN-OB9-BG
AP Memory DRAM IoT RAM 512Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24
3.631Expected 20/03/2026
Min.: 1
Mult.: 1

ISSI DRAM 64Mb, SerialRAM, SPI and QPI Protocol, 3V, 104MHz, SOIC-8
198Expected 24/04/2026
Min.: 1
Mult.: 1
Max.: 66

Alliance Memory DRAM 64M 4Mx16 1.8V LP Pseudo SRAM IT 72.367Factory Stock Available
Min.: 1
Mult.: 1

AP Memory DRAM IoT RAM 128Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
Reel: 5.000

AP Memory DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144MHz, 1.8V, USON8 Non-Stocked Lead-Time 20 Weeks
Min.: 10.000
Mult.: 10.000
Reel: 10.000

AP Memory DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, Ind. Temp, WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
Reel: 5.000


AP Memory DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, Ind. Temp., SOP8 Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1
Reel: 3.000

AP Memory DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144/84MHz, RBX, 1.8V, Ind. Temp, WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
Reel: 5.000

AP Memory DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) Non-Stocked Lead-Time 20 Weeks
Min.: 4.800
Mult.: 4.800

AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
Reel: 5.000

AP Memory DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 144MHz, HS, 1.8V, Ind. Temp, WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
Reel: 5.000

AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
Reel: 5.000

AP Memory APS12804O-SQRH-WA
AP Memory DRAM IoT RAM 128Mb QSPI (x1,x4) SDR 144/84MHz, HS, 1.8V, Ind. Temp, WLCSP Non-Stocked Lead-Time 15 Weeks
Min.: 5.000
Mult.: 5.000
Reel: 5.000

AP Memory APS256XXN-OB9-WA
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
Reel: 5.000

AP Memory APS256XXN-OBX9-BG
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ext.. Temp., BGA24 Non-Stocked Lead-Time 20 Weeks
Min.: 4.800
Mult.: 4.800

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 14 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 14 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500


ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500


ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS Non-Stocked Lead-Time 28 Weeks
Min.: 3.000
Mult.: 3.000
Reel: 3.000

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS Non-Stocked Lead-Time 28 Weeks
Min.: 3.000
Mult.: 3.000
Reel: 3.000

ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS Non-Stocked Lead-Time 28 Weeks
Min.: 3.000
Mult.: 3.000
Reel: 3.000

ISSI DRAM 32Mb, SerialRAM, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS Non-Stocked Lead-Time 28 Weeks
Min.: 3.000
Mult.: 3.000
Reel: 3.000

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS Non-Stocked Lead-Time 28 Weeks
Min.: 3.000
Mult.: 3.000
Reel: 3.000

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS Non-Stocked Lead-Time 28 Weeks
Min.: 3.000
Mult.: 3.000
Reel: 3.000