PDIP-8 MOSFETs

Results: 9
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging

Advanced Linear Devices MOSFETs Dual N-Ch Matched Pr VGS=0.0V
Datasheet
34In Stock
Min.: 1
Mult.: 1

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 180 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFETs Dual EPAD(R) N-Ch
Datasheet
35In Stock
Min.: 1
Mult.: 1

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 12 mA 500 Ohms, 500 Ohms - 12 V, 12 V 20 mV 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFETs Dual EPAD(R) N-Ch
Datasheet
53In Stock
Min.: 1
Mult.: 1

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 12 mA 500 Ohms, 500 Ohms - 12 V, 12 V 0 V 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V
Datasheet
34In Stock
Min.: 1
Mult.: 1

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 20 mV 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V
Datasheet
16In Stock
Min.: 1
Mult.: 1

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 0 V 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFETs Dual N-Ch Matched Pr VGS=0.0V
Datasheet
Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole PDIP-8 N-Channel 2 Channel 10.6 V 80 mA 14 Ohms - 12 V, 12 V 420 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFETs Dual N-Ch Matched Pr VGS=0.0V
Datasheet
Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole PDIP-8 N-Channel 2 Channel 10.6 V 80 mA 14 Ohms - 12 V, 12 V 820 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFETs Dual N-Ch Matched Pr VGS=0.0V
Datasheet
Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 780 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFETs Dual N-Ch Matched Pr VGS=0.0V
Datasheet
Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 1.4 V 0 C + 70 C 500 mW Enhancement EPAD Tube