Zurück zu Alliance Memory

Alliance Memory MT53B128M32 Mobile LPDDR4 SDRAM Memory IC

Alliance Memory / Micron MT53B128M32 Mobile LPDDR4 SDRAM Memory IC is a high-performance 4Gb (512MB) low-power memory solution. The MT53B128M32 is designed for mobile, embedded, industrial, and portable electronic systems that require fast data access with minimal power consumption. Built on an advanced LPDDR4 architecture, the Alliance Memory / Micron device features a 128M x 32 configuration organized as two independent x16 channels, enabling efficient parallel processing and reduced latency. Operating at core and I/O supply voltages as low as 1.8V and 1.1V, respectively, the memory delivers an optimal balance of performance and energy efficiency for battery-powered and thermally constrained applications.

The MT53B128M32 supports data rates up to 3200Kb/s per pin and provides up to 12.8GB/s of bandwidth per die through the dual-channel architecture. Additional features include a 16n prefetch architecture, eight internal banks per channel for concurrent operations, programmable read/write latencies, selectable burst lengths, partial-array self-refresh, clock-stop capability, and an integrated temperature sensor for optimized refresh management. Housed in a compact 200-ball VFBGA package, the device is an excellent choice for embedded computing platforms, industrial automation equipment, Internet of Things (IoT) gateways, networking hardware, automotive electronics, smart vision systems, and other applications demanding high-speed memory performance, low power consumption, and reliable operation.

Features

  • Ultra-low-voltage core and I/O power supplies
    • VDD1 = 1.70V to 1.95V, 1.8V nominal
    • VDD2/VDDQ = 1.06V to 1.17V, 1.10V nominal
  • 1600kHz to 10MHz (3200Kb to 20Mb/s/pin data rate range)
  • 16n prefetch DDR architecture
  • 2-channel partitioned architecture for low RD/WR energy and low average latency
  • 8x internal banks per channel for concurrent operation
  • Single-data-rate CMD/ADR entry
  • Bidirectional/differential data strobe per byte lane
  • Programmable READ and WRITE latencies (RL/WL)
  • Programmable and on-the-fly burst lengths (BL = 16, 32)
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling
  • Up to 12.8GB/s per die (2-channels x 6.4GB/s)
  • On-chip temperature sensor to control the self-refresh rate
  • Partial-array self refresh (PASR)
  • Selectable output drive strength (DS)
  • Clock-stop capability
  • Programmable VSSQ (ODT) termination
  • -40°C to +95°C operating temperature range
  • RoHS-compliant, Green packaging - 200-ball VFBGA (10mm x 14.5mm), ø0.35 SMD

Applications

  • Industrial handheld devices
  • Embedded computing platforms
  • Internet of Things (IoT) gateways and edge devices
  • Networking and communications equipment
  • Automotive and transportation electronics
  • Smart cameras and vision systems
  • Consumer and portable electronics
  • AI and machine learning edge devices

Package Block Diagram

Block Diagram - Alliance Memory MT53B128M32 Mobile LPDDR4 SDRAM Memory IC

Functional Block Diagram

Block Diagram - Alliance Memory MT53B128M32 Mobile LPDDR4 SDRAM Memory IC
Veröffentlichungsdatum: 2026-09-03 | Aktualisiert: 2026-09-03