MJD Automotive Medium Power Transistors

Diodes Inc. MJD Automotive Medium Power Transistors are bipolar transistors that are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. Each device has a collector-emitter breakdown voltage of 50V or 100V (minimum). The Diodes Inc. MJD Automotive Medium Power Transistors come in a TO-252 (DPAK) package and are ideal for power switching or amplification applications.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Diodes Incorporated Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
Datasheet
4.777In Stock
MouseReel Available
Min.: 1
Mult.: 1
Max.: 290
: 2.500

Si SMD/SMT TO-252-3 NPN Single 100 V 120 V 7 V 1.5 V 2.7 W - 55 C + 150 C AEC-Q100 Reel, Cut Tape, MouseReel
Diodes Incorporated Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
Datasheet
908In Stock
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT TO-252-3 NPN Single 100 V 120 V 7 V 7 V 2.7 W - 55 C + 150 C AEC-Q100 Reel, Cut Tape
Diodes Incorporated Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
Datasheet
275In Stock
2.500On Order
Min.: 1
Mult.: 1
Max.: 490
: 2.500

Si SMD/SMT TO-252-3 NPN Single 50 V 70 V 7 V 300 mV 2.6 W - 55 C + 150 C AEC-Q100 Reel, Cut Tape
Diodes Incorporated Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
Datasheet
8In Stock
5.000Expected 22/02/2027
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT TO-252-3 NPN Single 100 V 120 V 7 V 1.2 V 2.6 W - 55 C + 150 C AEC-Q100 Reel, Cut Tape