1200V Common Emitter IGBT Modules

Infineon Technologies 1200V Common Emitter IGBT Modules are part of the TRENCHSTOP™ IGBT7 portfolio that combines a 600A or 800A common emitter with low saturation and a fast trench IGBT module with an emitter-controlled diode. The 1200V Common Emitter IGBT Modules provide higher current capability in existing packages, allowing an increase in inverter output power with the same frame size. The Infineon 1200V Common Emitter IGBT Modules supply high power density, reliability, and flexibility, prepared for three-level configuration.

Resultaten: 2
Selecteren Afbeelding Onderdeelnummer Fabrikant Omschrijving Gegevensblad Beschikbaarheid Prijsbepaling (EUR) De resultaten in de tabel met eenheidsprijs filteren op basis van uw hoeveelheid. Hvh. RoHS ECAD-model Product Configuratie Collector-emitterspanning VCEO max. Collector-emitterverzadigingsspanning Gate-emitterlekstroom Minimale bedrijfstemperatuur Maximale bedrijfstemperatuur Montagetype Technologie Verpakken
Infineon Technologies IGBT-modules 1200 V, 600 A common emitter IGBT module 26In voorraad
154,41 €
Min.: 1
Veelv.: 1
IGBT Silicon Modules Dual 1.2 kV 1.75 V 100 nA - 40 C + 175 C Screw Mount Si Tray
Infineon Technologies IGBT-modules 1200 V, 800 A common emitter IGBT module 26In voorraad
174,73 €
Min.: 1
Veelv.: 1
IGBT Silicon Modules Dual 1.2 kV 1.75 V 100 nA - 40 C + 175 C Screw Mount Si Tray