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Diodes Incorporated DMT31M8LFVWQ 30V N-Ch Enhancement Mode MOSFETs

Diodes Incorporated DMT31M8LFVWQ 30V N-Channel Enhancement Mode MOSFETs provide low on-resistance in a thermally efficient small form factor package. The devices offer superior switching performance and are ideal for high-efficiency power management applications. The Diodes Inc. DMT31M8LFVWQ MOSFETs are available in a PowerDI®3333-8 package with a wettable flank for improved optical inspection.

Features

  • Low RDS(ON) – ensures on-state losses are minimized
  • Small form factor thermally efficient package enables higher density end products
  • Occupies just 33% of the board area occupied by SO-8, enabling a smaller end product
  • Wettable flank for improved optical inspection
  • Lead-free finish; RoHS-compliant
  • Halogen and antimony-free “Green” device
  • For automotive applications requiring specific change control

Applications

  • Backlighting
  • Power-management functions
  • DC-DC converters

Specifications

  • PowerDI®3333-8 package
  • Molded plastic, “Green” molding compound package material
  • UL flammability classification rating 94V-0
  • Moisture sensitivity level 1 per J-STD-020
  • Finish – matte tin annealed over copper leadframe
  • Solderable per MIL-STD-202, Method 208
  • 0.003 grams weight (approximate)

Application Circuit

Application Circuit Diagram - Diodes Incorporated DMT31M8LFVWQ 30V N-Ch Enhancement Mode MOSFETs
Published: 2025-10-21 | Updated: 2025-11-09