GeneSiC Semiconductor 3300V SiC MOSFETs

GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. The 3300V SiC MOSFETs deliver low conduction losses at all temperatures, allowing superior robustness and system reliability.


  • Softer RDS(ON) v/s temperature dependency
  • LoRing™ - electromagnetically optimized design
  • Smaller RG(INT) and lower QG
  • Low device capacitances (COSS CRSS)
  • Industry-leading UIL and short-circuit robustness
  • Robust body diode with low VF and low QRR
  • Normally off-stable temperature up to 175°C
  • Optimized package with separate driver source pin


  • Traction
  • Solar string inverters
  • EV- fast chargers
  • Pulsed power
  • Switched-mode power supply
  • Energy storage
  • Solid-state transformers
  • Solid-state circuit breakers

Package Styles

GeneSiC Semiconductor 3300V SiC MOSFETs
Published: 2021-11-09 | Updated: 2023-02-22