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Nexperia PMVxx P-Channel Trench MOSFETs

Nexperia P-Channel Trench MOSFETS are enhancement mode field-effect transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. They employ Trench MOSFET technology and offer a low threshold voltage and very fast switching. These MOSFETs are ideal for such applications as relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits.

Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • 2kV ESD protected
  • Low on-state resistance
  • Enhanced power dissipation capability of 1096mW
  • Enhanced power dissipation capability: Ptot= 1000mW

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits

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View Results ( 4 ) Page
Part Number Datasheet Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Vgs - Gate-Source Voltage Qg - Gate Charge Pd - Power Dissipation
PMV33UPE,215 PMV33UPE,215 Datasheet 5.3 A 30 mOhms 950 mV - 8 V, + 8 V 14.7 nC 980 mW
PMV50XPR PMV50XPR Datasheet 4.4 A 48 mOhms 900 mV - 12 V, + 12 V 7.7 nC 1.096 W
PMV75UP,215 PMV75UP,215 Datasheet 3.2 A 77 mOhms 900 mV - 12 V, + 12 V 5 nC 1 W
PMV50XPAR PMV50XPAR Datasheet 3.6 A 60 mOhms 1 V - 10 V, + 10 V 7.7 nC 1.096 W
Published: 2015-03-10 | Updated: 2023-02-07