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onsemi NTTFS1D8N02P1E N-Channel Power MOSFET

onsemi NTTFS1D8N02P1E N-Channel Power MOSFET features a compact design and good thermal performance. This MOSFET offers low drain-to-source resistance (RDS(on)) to minimize conduction losses and low total gate charge (QG) and capacitance to minimize driver losses. onsemi NTTFS1D8N02P1E MOSFET provides 25V drain-to-source voltage (V(BR)DSS) and 150A maximum drain current (ID). Typical applications include DC-DC converters, power load switches, notebook battery management, motor control, secondary rectification, battery management, and Point of Load (POL).

Features

  • Small footprint in advanced power 3.3mm x 3.3mm package technology
  • Low RDS(on) to minimize conduction losses
    • 1.3mΩ at 10V
    • 1.8mΩ at 4.5V
  • Low QG and capacitance to minimize driver losses
  • 25V V(BR)DSS
  • 150A maximum ID

Applications

  • DC-DC converters
  • Power load switches
  • Notebook battery management
  • Motor control
  • Secondary rectification
  • Battery management
  • POL
Published: 2020-09-16 | Updated: 2024-06-03