Qorvo QPD2060D 600µm Discrete GaAs pHEMT
Qorvo QPD2060D 600µm Discrete GaAs pHEMT (Pseudomorphic High-Electron-Mobility-Transistor) features a DC to 20GHz operating frequency. The QPD2060D typically provides 28dBm of output power at P1dB with a gain of 12dB and 55% power-added efficiency at 1dB compression. This performance makes the QPD2060D appropriate for high-efficiency applications.
The QPD2060D is designed using a 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The Qorvo QPD2060D GaAs pHEMT is offered in a 0.41mm x 0.34mm x 0.10mm bare die. The device features a protective overcoat layer with silicon nitride providing high environmental robustness and scratch protection.
Features
- DC to 20GHz frequency range
- 28dBm typical output power P1dB
- 12dB typical gain at 12GHz
- 55% typical PAE at 12GHz
- 1.4dB typical noise factor at 12GHz
- 8V drain voltage
- 97mA drain current
- 0.25µm GaAs pHEMT technology
- 0.41mm x 0.34mm x 0.10mm bare die
- Halogen-free, lead-free, and RoHS compliant
Applications
- Communications
- Radar
- Point-to-point radio
- Satellite communications
Related Products
Qorvo QPD2080D 800µm Discrete GaAs pHEMT
Provides 29.5dBm of output power at P1dB, 11.5dB gain, and 56% power-added efficiency at 1dB.
Qorvo QPD2120D 1200µm Discrete GaAs pHEMT
Provides 31dBm of output power at P1dB, 11.5dB gain, and 57% power-added efficiency at 1dB.
Qorvo QPD2160D 1600µm Discrete GaAs pHEMT
Provides 32.5dBm of output power at P1dB, 10.4dB gain, and 63% power-added efficiency at 1dB.