STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor
STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor is a high-performance enhancement-mode transistor designed for demanding power conversion applications. Built on Gallium Nitride (GaN) technology, the STMicro SGT070R70HTO offers superior switching performance with a low on-resistance of 70mΩ and minimal gate charge, enabling high efficiency and reduced losses in high-frequency operations. With a 700V drain-source voltage rating, the transistor is ideal for applications such as power supplies, motor drives, and renewable energy systems. The device features robust thermal performance and is housed in a compact TO-LL package, making it suitable for designs where space and heat management are critical. Fast switching capability and low input capacitance contribute to improved system efficiency and power density, positioning the SGT070R70HTO as a strong choice for next-generation power electronics.
Features
- Enhancement mode, normally off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Kelvin source pad for optimum gate driving
- Zero reverse recovery charge
- ESD safeguard
- RoHS compliant
Applications
- AC-DC converters
- DC-DC converters
- Solar inverters
Specifications
- TO-LL package
- 700V maximum drain-source voltage
- 800V maximum drain-source transient voltage
- -6V to 7V maximum gate-source voltage range
- 26A maximum continuous drain current
- 60A maximum pulse drain current
- 231W maximum total power dissipation
- 2.4V typical source-drain reverse voltage
- Typical switching times
- 10ns turn-on delay time
- 9ns rise time
- 7ns turn-off delay time
- 9ns fall time
- Static
- 65μA maximum drain-source leakage current
- 110μA typical gate-source leakage current
- 1.2V to 2.5V gate threshold voltage range
- 122mΩ typical static drain-source on-resistance at +150°C
- Dynamic
- 300pF typical input capacitance
- 135pF typical output capacitance
- 2.3pF typical reverse transfer capacitance
- 190pF typical equivalent output capacitance energy-related
- 240pF typical equivalent output capacitance time-related
- 1.4Ω typical intrinsic gate resistance
- 2.3V typical gate plateau voltage
- 8.5nC typical total gate charge
- 0.7nC typical gate-source charge
- 3.6nC typical gate-drain charge
- 0nC typical reverse recovery charge
- 94.7nC typical output charge
- 2kV maximum HBM ESD rated
- Thermal resistance
- 0.54°C/W junction-to-case
- 56.47°C/W junction-to-ambient
- -55°C to +150°C operating junction temperature range
Schematic
Test Circuits
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Published: 2025-10-15
| Updated: 2025-11-06