Qorvo QPA2212D Ka-Band GaN Power Amplifier
Qorvo QPA2212D Ka-Band GaN Power Amplifier is fabricated using a 0.15µm Gallium Nitride on Silicon Carbide (GaN on SiC) process (QGaN15). Operating between 27GHz and 31GHz, the QPA2212D achieves 10W linear power with -25dBc intermodulation distortion and 22dB small-signal gain. Saturated output power is 25W with a power-added efficiency of 25%.
To simplify system integration, the QPA2212D is fully matched to 50Ω with integrated DC blocking caps on both I/O ports. The Qorvo QPA2212D is 100% DC and RF tested on-wafer to ensure compliance with electrical specifications. The device features a compact 3.630mm x 5.040mm x 0.050mm bare die and is lead-free and RoHS compliant.
Features
- 27GHz to 31GHz frequency range
- 44dBM output power typical at 29GHz
- 25% power-added efficiency typical at 29GHz
- 22.7dB small-signal gain typical at 29GHz
- 17dB input return loss typical at 29GHz
- 14db output return loss typical at 29GHz
- 80.3W power dissipation at +85°C
- 29.5V drain voltage
- -5V to 0V gate voltage range
- -40°C to +85°C operating temperature
- 3.630mm x 5.040mm x 0.050mm bare die
- Lead-free, halogen-free, RoHS compliant
Applications
- 5G infrastructure
- Satellite communications
Block Diagram
Development Tools
Qorvo QPA2212D Evaluation Board
Demonstration and development platform for the QPA2212D Ka-Band Power Amplifier.
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Published: 2020-02-07
| Updated: 2024-09-09