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Qorvo QPD0007 Evaluation Board

Qorvo QPD0007 Evaluation Board is designed to evaluate the features and functionalities of single-stage unmatched QPD0007 GaN RF transistors. These RF transistors are SiC High-Electron-Mobility Transistors (HEMTs) in a DFN package that operate at DC to 5GHz frequency range. Qorvo QPD0005 RF transistors can deliver P3dB output power of 20W at +48V operation. Typical applications include WCDMA/LTE, macrocell base station, microcell base station, general-purpose, small cell, active antenna, and 5G massive MIMO.

Applications

  • WCDMA/LTE
  • Macrocell base stations
  • Microcell base stations
  • Small cell
  • Active antennas
  • 5G massive MIMO
  • General-purpose applications

Associated RF Transistor

Qorvo QPD0007 GaN RF Transistors

Single-stage unmatched transistors capable of delivering P3dB output power of 20W at +48V operation.

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Related Products

Qorvo QPD0005 Evaluation Board

Designed to evaluate QPD0005 GaN single-stage, unmatched SiC RF transistors.

Learn Moreabout Qorvo QPD0005 Evaluation Board View Productsrelated to Qorvo QPD0005 Evaluation Board
Published: 2020-11-24 | Updated: 2024-08-27