Toshiba Automotive U-MOSX-H MOSFETs
Toshiba Automotive U-MOSX-H MOSFETs are AEC-Q101 qualified with low drain-source on-resistance. These devices feature a low leakage current of IDSS = 10µA (max) (VDS = 100V). The Toshiba Automotive U-MOSX-H MOSFETs are ideal for automotive, switching voltage, regulators, DC-DC converters, and motor drivers.
Features
- AEC-Q101 qualified
- Low drain-source on-resistance of RDS(ON) = 1.6mΩ (typ.) (VGS = 10V)
- Low leakage current of IDSS = 10µA (max) (VDS = 100V)
- Vth = 2.5V to 3.5V (VDS = 10V, ID = 1mA) enhancement mode
Applications
- Automotive
- Switching voltage regulators
- DC-DC converters
- Motor drivers
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Published: 2020-04-29
| Updated: 2025-08-19