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STDRIVEG600W

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Mouser No:

511-STDRIVEG600W

Mfr. No:

STDRIVEG600W

Mfr.:

STMicroelectronics

Description:

Gate Drivers High voltage half-bridge gate driver for GaN transistors

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STDRIVEG600W Datasheet (PDF)

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Mfr.:

STMicroelectronics

Mfr. No:

STDRIVEG600

Description:

Gate Drivers High voltage half-bridge gate driver for GaN transistors

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Number of Drivers:	2 Driver
Number of Outputs:	1 Output
Output Current:	5.5 A, 6 A
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	20 V
Rise Time:	7 ns
Fall Time:	5 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Bulk
Brand:	STMicroelectronics
Output Voltage:	520 V
Product Type:	Gate Drivers
Factory Pack Quantity:	1
Subcategory:	PMIC - Power Management ICs
Technology:	GaN

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Datasheet

STDRIVEG600W Datasheet (PDF)

PCN

Product Change Notification 2025-7-29 (PDF)

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.