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Bench Talk for Design Engineers

Bench Talk

Bench Talk for Design Engineers | The Official Blog of Mouser Electronics

GaN HEMTs: Future Power Semiconductors

On May 2, 2024 in All, General, Power by ROHM Semiconductor

Silicon-based MOSFETs have been standard in power electronics, but evolving technology demands higher efficiency and smaller form factors, driving interest in GaN HEMTs. GaN HEMTs excel in high-frequency, medium-voltage applications by offering faster switching speeds with reduced transmission loss.

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Tagged With: efficiency advancements, gallium nitride hemts, gan technology, high-frequency applications, medium-voltage applications, power density, power electronics, power semiconductors, semiconductor evolution, silicon-based mosfets, wireless charging

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Copyright ©2026 Mouser Electronics, Inc.

Mouser® and Mouser Electronics® are trademarks of Mouser Electronics, Inc. in the U.S. and/or other countries. All other trademarks are the property of their respective owners. Corporate headquarters and logistics centre in Mansfield, Texas USA.