SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Configuration If - Forward Current Vrrm - Repetitive Reverse Voltage Vf - Forward Voltage Ifsm - Forward Surge Current Ir - Reverse Current Minimum Operating Temperature Maximum Operating Temperature Series Qualification Packaging
Littelfuse SiC Schottky Diodes RECT 650V 20A SM SCHOTTKY 713In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-2 (TO-263-2) Single 20 A 650 V 1.8 V 95 A 100 uA - 55 C + 175 C LSIC2SD AEC-Q101 Reel, Cut Tape, MouseReel

Littelfuse SiC Schottky Diodes RECT 1.2KV 40A SM SCHOTTKY 74In Stock
Min.: 1
Mult.: 1

Screw Mount SOT-227B Dual Series 40 A 1.2 kV 1.8 V 145 A 100 uA - 55 C + 175 C LSIC2SD Tube

Littelfuse SiC Schottky Diodes RECT 1.2KV 120A SM SCHOTTKY
99Expected 25/08/2026
Min.: 1
Mult.: 1

Screw Mount SOT-227B Dual Series 120 A 1.2 kV 1.8 V 440 A 100 uA - 55 C + 175 C LSIC2SD Tube
Littelfuse SiC Schottky Diodes 650V/8A SiC SBD?TO263-2LAEC-Q101 Non-Stocked
Min.: 800
Mult.: 800

SMD/SMT D2PAK-2 (TO-263-2) Single 8 A 650 V 1.8 V 40 A 100 uA - 55 C + 175 C LSIC2SD AEC-Q101