BUK9Q N-Channel Trench MOSFET

Nexperia BXK9Q29-60A N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) SMD plastic package using Trench MOSFET technology. This N-channel MOSFET is logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C. The BXK9Q29-60A trench MOSFET features a 60V maximum drain-source voltage, 84A maximum peak drain current, and 27W maximum total power dissipation. This N-channel MOSFET also features a 23.7mΩ typical drain-source on-state resistance, 25mJ maximum non-repetitive drain-source avalanche energy, and 15.8A maximum non-repetitive avalanche current. The BXK9Q29-60A trench MOSFET is EU/CN RoHS-compliant. Typical applications include LED lighting, switching circuits, and DC-DC conversion.