Toshiba DTMOSIV MOSFETs

Results: 112
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
5In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 80 mOhms - 30 V, 30 V 3 V 115 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube
Toshiba MOSFETs MOSFET NChannel 068ohm DTMOS
Datasheet
50In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 35 A 68 mOhms - 30 V, 30 V 3.5 V 100 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube

Toshiba MOSFETs MOSFET NChtrr130ns 0.08ohm DTMOS
Datasheet
9In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 80 mOhms - 30 V, 30 V 4.5 V 115 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch DTMOSIV 600 V 50W 4100pF 38.8A
Datasheet
85In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 38.8A 270W FET 600V 4100pF 135nC
Datasheet
13In Stock
50Expected 16/03/2026
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 38.8A 270W FET 600V 4100pF 110nC
Datasheet
25In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 65 mOhms - 30 V, 30 V 2.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
Datasheet
40In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFETs TO247(OS) PD=400W 1MHz PWR MOSFET TRNS
Datasheet
30In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 57 mOhms - 30 V, 30 V 4.5 V 185 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 61.8A 400W FET 600V 3500pF 180nC
Datasheet
25In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.7 V 180 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube

Toshiba MOSFETs DTMOSIV 600V 45mOhm 61.8A 400W 6500pF
Datasheet
104In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 36 mOhms - 30 V, 30 V 3 V 205 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube

Toshiba MOSFETs DTMOSIV 600V 40mOhm 61.8A 400W 6500pF
Datasheet
10In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.7 V 180 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 6.2A 30W FET 600V 390pF 12nC
Datasheet
169In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms - 30 V, 30 V 3.7 V 12 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC
Datasheet
197In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms - 30 V, 30 V 3.7 V 12 nC - 55 C + 150 C 60 W DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
86In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 540 mOhms - 30 V, 30 V 3 V 16 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 7A 30W FET 600V 490pF 15nC
Datasheet
44In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 600 mOhms - 30 V, 30 V 2.7 V 15 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
114In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 6.8 A 640 mOhms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 7A 60W FET 600V 490pF 15nC
Datasheet
719In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 500 mOhms - 30 V, 30 V 3.7 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
446In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6.8 A 660 mOhms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A
Datasheet
144In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 7 A 500 mOhms - 30 V, 30 V 3.7 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC
Datasheet
89Expected 15/06/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 30 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube

Toshiba MOSFETs DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
Datasheet
30Expected 20/02/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 9.7 A 380 mOhms - 30 V, 30 V 2.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 2.7 V 20 nC - 55 C + 150 C 88.3 W Enhancement DTMOSIV Reel
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.000
Mult.: 2.000
Reel: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 11.1 A 350 mOhms - 30 V, 30 V 2.5 V 25 nC - 55 C + 150 C 100 W Enhancement DTMOSIV Reel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 11.5 A 300 mOhms - 30 V, 30 V 2.7 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube