STMicroelectronics STH4N150-2AG N-Channel Power MOSFET
STMicroelectronics STH4N150-2AG N-Channel Power MOSFET is designed to deliver high voltage and robustness for the automotive market. This MOSFET is built using PowerMESH™ technology; the device combines a very high 1500V drain-source voltage rating with low gate charge and robust avalanche capability. The STH4N150-2AG MOSFET is automotive-grade, AEC-Q101-qualified, and available in an H2PAK-2 package. This device is suitable for high voltage, automotive, auxiliary, and switching applications.
Features
- AEC-Q101 qualified
- Very low gate charge 1500V
- 100% avalanche tested
- 10Ω maximum RDS(ON)
- 2.6A drain current (ID)
- ±30V gate source voltage
- -55°C to +150°C operating junction and storage temperature range
Applications
- Switching requirements
- Auxiliaries
Dimensions
Gepubliceerd op: 2026-07-31
| Bijgewerkt op: 2026-08-10